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| APM2522NU Datasheet, PDF (3/11 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET | |||
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APM2522NU
Electrical Characteristics (TA = 25°C)
Symbol
Parameter
Test Condition
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
25
IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
1
IGSS Gate Leakage Current
VGS=±20V, VDS=0V
RDS(ON) a Drain-Source On-state Resistance VGS=10V, IDS=20A
VGS=4.5V, IDS=10A
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics b
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=10A, VGS=0V
ISD=10A, dISD/dt =100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15â¦,
IDS=1A, VGEN=10V,
RG=6â¦
VDS=15V, VGS=10V,
IDS=20A
Notes:
a : Pulse test ; pulse width â¤300µs, duty cycle ⤠2%.
b : Guaranteed by design, not subject to production testing.
1
30
1.5 2.5
±100
15 20
22 28
0.7 1.1
50
3
2
825
125
85
13 24
19 35
31 57
5 10
17 24
2
5
Unit
V
µA
V
nA
mâ¦
V
ns
nC
â¦
pF
ns
nC
Copyright © ANPEC Electronics Corp.
3
Rev. A.1 - Jun., 2006
www.anpec.com.tw
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