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| APM2505NU Datasheet, PDF (3/10 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET | |||
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APM2505NU
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Condition
APM2505NU
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
25
V
IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V
TJ=85°C
1
µA
30
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
1 1.5 2
V
IGSS Gate Leakage Current
VGS=±20V, VDS=0V
±100 nA
RDS(ON) a Drain-Source On-state Resistance VGS=10V, IDS=40A
VGS=4.5V, IDS=20A
4 5.5
mâ¦
7
8
Diode Characteristics
VSDa Diode Forward Voltage
ISD=5A, VGS=0V
Dynamic Characteristicsb
RG Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz
td(ON)
Tr
td(OFF)
Tf
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=15V, RL=15â¦,
IDS=1A, VGEN=10V,
RG=6â¦
Gate Charge Characteristicsb
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=25V, VGS=10V,
IDS=30A
Notes:
a : Pulse test ; pulse widthâ¤300µs, duty cycleâ¤2%.
b : Guaranteed by design, not subject to production testing.
0.8 1.3 V
1.3
â¦
4700
930
pF
280
22 41
16 29
ns
150 210
68 82
88 114
12.8
nC
21.2
Copyright © ANPEC Electronics Corp.
3
Rev. B.2 - Oct., 2005
www.anpec.com.tw
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