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| APM2505NU Datasheet, PDF (2/10 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET | |||
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APM2505NU
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJC
Thermal Resistance-Junction to Case
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Mounted on PCB of 1in2 Pad Area
IDP
300µs Pulse Drain Current Tested
TA=25°C
TA=100°C
ID
Continuous Drain Current
TA=25°C
TA=100°C
PD
Maximum Power Dissipation
TA=25°C
TA=100°C
RθJA
Thermal Resistance-Junction to Ambient
Mounted on PCB of Minimum Footprint
IDP
300µs Pulse Drain Current Tested
TA=25°C
TA=100°C
ID
Continuous Drain Current
TA=25°C
TA=100°C
PD
Maximum Power Dissipation
TA=25°C
TA=100°C
RθJA
Thermal Resistance-Junction to Ambient
Note:
* Current limited by bond wire.
Rating
25
±20
150
-55 to 150
5
120
75
50*
30
50
20
2.5
120
75
17
10
2.5
1
50
120
75
14
9
1.6
0.6
75
Unit
V
°C
°C
A
A
A
W
°C/W
A
A
W
°C/W
A
A
W
°C/W
Copyright © ANPEC Electronics Corp.
2
Rev. B.2 - Oct., 2005
www.anpec.com.tw
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