AM10N20-400D Datasheet, PDF (4/5 Pages) Analog Power – N-Channel 200-V (D-S) MOSFET

Analog Power
AM10N20-400D
Typical Electrical Characteristics
10
VDS =
9 _I1D0=0V4A
8
7
6
5
4
3
2
1
0
0
5
10
15
Qg - Total Gate Charge (nC)
7. Gate Charge
100
10
1
0.1
0.01
0.1
1
10
100
VDS Drain to Source Voltage (V)
9. Safe Operating Area
20
10 uS
100 uS
1 mS
10 mS
100 mS
1 SEC
10 SEC
100
SEC
DC
IDM
Limit
limited
by RDS
1000
2.5
2
1.5
1
0.5
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
8. Normalized On-Resistance Vs
Junction Temperature
200
180
160
140
120
100
80
60
40
20
0
0.001 0.01 0.1
1
10 100 1000
t1 TIME (SEC)
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.0001
0.001
© Preliminary
R_θJA(t) = r(t) x R_θJA
R_θJA = 50 °C /W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
4
Publication Order Number:
DS-AM10N20-400D-1A