AM10N20-400D Datasheet, PDF (1/5 Pages) Analog Power – N-Channel 200-V (D-S) MOSFET

Analog Power
N-Channel 200-V (D-S) MOSFET
Key Features:
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• PoE Power Sourcing Equipment
• PoE Powered Devices
• Telecom DC/DC converters
• White LED boost converters
AM10N20-400D
VDS (V)
200
PRODUCT SUMMARY
r_DS(on) (mΩ)
400 @ V_GS = 10V
450 @ V_GS = 5.5V
ID(A)
9.2
8.7
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
V_DS
200
Gate-Source Voltage
V_GS
±20
Continuous Drain Current
Pulsed Drain Current ^b
T_C=25°C
I_D
9.2
I_DM
50
Continuous Source Current (Diode Conduction)
I_S
45
Power Dissipation
T_C=25°C
P_D
50
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient ^a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R_θJA
R_θJC
Maximum
50
3
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS-AM10N20-400D-1A