English
Language : 

AMD560C Datasheet, PDF (2/7 Pages) Analog Power – N & P-Channel 60-V (D-S) MOSFET
Analog Power
AMD560C
Electrical Characteristics
Parameter
Symbol Test Conditions
Min
Static
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
VGS(th)
IGSS
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-Resistance a
rDS(on)
Forward Transconductance a
gfs
Diode Forward Voltage a
VSD
VDS = VGS, ID = 250 uA
VDS = VGS, ID = -250 uA
VDS = 0 V, VGS = ±20 V
VDS = 48 V, VGS = 0 V
VDS = -48 V, VGS = 0 V
VDS = 5 V, VGS = 10 V
VDS = -5 V, VGS = -10 V
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 16 A
VGS = -10 V, ID = -10 A
VGS = -4.5 V, ID = -8 A
VDS = 15 V, ID = 20 A
VDS = -15 V, ID = -10 A
IS = 17 A, VGS = 0 V
IS = -10 A, VGS = 0 V
Dynamic b
(Nch) 1
(Pch) -1
(Nch)
(Pch)
(Nch) 45
(Pch) -25
(Nch)
(Nch)
(Pch)
(Pch)
(Nch)
(Pch)
(Nch)
(Pch)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
N - Channel
VDS = 30 V, VGS = 4.5 V,
ID = 20 A
N - Channel
VDS = 30 V, RL = 1.5 Ω,
ID = 20 A,
VGEN = 10 V, RGEN = 6 Ω
N - Channel
VDS = 15 V, VGS = 0 V, f = 1 Mhz
P - Channel
VDS = -30 V, VGS = 4.5 V,
ID = -10 A
P - Channel
VDS = -30 V, RL = 3 Ω,
ID = -10 A,
VGEN = -10 V, RGEN = 6 Ω
P - Channel
VDS = -15 V, VGS = 0 V, f = 1 Mhz
Typ Max
±100
1
-1
24
30
85
105
15
11
0.89
-0.98
9
3
4
5
5
27
8
1422
84
79
10
5
4
5
4
30
11
1143
84
60
Unit
V
V
nA
uA
A
A
mΩ
mΩ
S
S
V
V
nC
ns
pF
nC
ns
pF
© Preliminary
2
Publication Order Number:
DS_AMD560C_1A