English
Language : 

AMD560C Datasheet, PDF (1/7 Pages) Analog Power – N & P-Channel 60-V (D-S) MOSFET
Analog Power
AMD560C
N & P-Channel 60-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
VDS (V)
60
-60
PRODUCT SUMMARY
rDS(on) (mΩ)
28 @ VGS = 10V
35 @ VGS = 4.5V
80 @ VGS = -10V
105 @ VGS = -4.5V
ID (A)
35
31
-20
-18
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Nch Limit Pch Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
Operating Junction and Storage Temperature Range
TC=25°C
TC=25°C
TC=25°C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
60
±20
35
140
35
50
TJ, Tstg
-60
±20
-20
-80
-20
50
-55 to 175
Units
V
A
A
W
°C
Parameter
Maximum Junction-to-Ambient c
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Symbol
RθJA
RθJC
Maximum
50
3
Units
°C/W
Notes
a. Package Limited
b. Pulse width limited by maximum junction temperature
c. Surface Mounted on 1” x 1” FR4 Board.
© Preliminary
1
Publication Order Number:
DS_AMD560C_1A