AM3906N Datasheet, PDF (1/5 Pages) Analog Power – Dual N-Channel Logical Level MOSFET

Analog Power
AM3906N
Dual N-Channel Logical Level MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r_DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature TSOP-6 Surface Mount Package
Saves Board Space
• Very fast switching
• Lower gate charge (2.2 nC)
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (OHM)
30
0.099 @ V_GS = 10 V
0.142 @ V_GS = 4.5V
1
2
3
I_D (A)
2.5
2.0
6
5
4
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
30
V
±20
2.5
2
A
I_DM
10
I_S
±0.8 ^A
T_A=25^oC
T_A=70^oC
P_D
0.95
W
0.7
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol Maximum Units
R_{ΤΗ JA}
130
o_C/W
176
July, 2002 - Rev. A
PRELIMINARY
1
Publication Order Number:
DS-AM3906_A