AM1541CE Datasheet, PDF (1/3 Pages) Analog Power – High performance trench technology

Analog Power
AM1541CE
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SC70-6 saves board space
• Fast switching speed
• High performance trench technology
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
40
140 @ VGS = 10V
190 @ VGS = 4.5V
-20
300 @ VGS = -10V
390 @ VGS = -4.5V
1
2
3
ESD
Protected
I_D (A)
1.2
1.1
-0.9
-0.8
6
5
4
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
V_DS
40
-40
V
VGS
20
-20
Continuous Drain Current^a
TA=25^oC
TA=70^oC
I_D
1.2
-0.9
1
-0.7
A
Pulsed Drain Current^b
I_DM
1.2
-1.2
Continuous Source Current (Diode Conduction)^a
I_S
0.25
-0.25 ^A
Power Dissipation^a
TA=25^oC
TA=70^oC
P_D
0.3
0.3
W
0.21
0.21
Operating Junction and Storage Temperature Range TJ, Tstg
-55 to 150
o_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Units
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
R_THJA
415
o_C/W
460
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM1541CE_A