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AAT9123 Datasheet, PDF (3/4 Pages) Advanced Analogic Technologies – 30V N-Channel Power MOSFET
Typical Characteristics
(TJ=25°C unless otherwise noted)
Forward Characteristics
50
10V
40
30
20
10
0
0
4.5V
5V
6V
4V
2V
3V
3.5V
1
2
3
4
5
VD (V)
RDS(ON) vs. VG
100
80
5A
60
15A
40
10A
20
0
0
2
4
6
8
10
VG (V)
Source to Drain Voltage
100
10
1
0.1
0.4
0.6
0.8
1
1.2
VSD (V)
9123.2001.12.0.9
AAT9123
30V N-Channel Power MOSFET
Normalized RDS(ON)
3
2.5
2
1.5
1
0.5
0
0
4V
3.5 V
4.5 V
5V
6V
10 V
10
20
30
40
50
ID (A)
Transfer
50
40
VG=VD
30
20
10
0
0
1
2
3
4
5
VG (V)
Gate Charge Characteristics
10
8
6
4
2
0
0
5
10
15
20
25
30
35
40
Gate Charge (nC)
3