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| AAT9123 Datasheet, PDF (1/4 Pages) Advanced Analogic Technologies – 30V N-Channel Power MOSFET | |||
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General Description
The AAT9123 30V N-Channel Power MOSFET is a
member of AnalogicTech's TrenchDMOS⢠prod-
uct family. Using the ultra-high density proprietary
TrenchDMOS technology, this product demon-
strates high power handling and small size.
AAT9123
30V N-Channel Power MOSFET
Features
PWMSwitchâ¢
⢠VDS(MAX) = 30V
⢠ID(MAX) = 10A @ 25°C
⢠Low RDS(ON):
⢠13.5 m⦠@VGS = 10V
⢠20 m⦠@ VGS = 4.5V
Applications
⢠DC-DC converters for mobile CPUs
⢠Battery-powered portable equipment
⢠High power density DC-DC converters
⢠Point-of-use Power Supplies
SOP8 Package
Top View
DDDD
8765
1234
SSSG
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=150°C 1
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Source-Drain Diode) 1
Maximum Power Dissipation 1
TA = 25°C
TA = 70°C
Operating Junction and Storage Temperature Range
Value
30
±20
±10
±8
±52
2.25
2.5
1.6
-55 to 150
Units
V
A
W
°C
Thermal Characteristics
Symbol
Description
RθJA
Maximum Junction-to-Ambient 1
RθJC
Maximum Junction-to-Case
Note 1: Mounted on 1â x 1â FR4 Copper Board. 10 sec pulse width.
9123.2001.12.0.9
Value
50
26
Units
°C/W
°C/W
1
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