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AAT3111 Datasheet, PDF (3/16 Pages) Advanced Analogic Technologies – MicroPower™ Regulated Charge Pump
AAT3111
MicroPower™ Regulated Charge Pump
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
Description
Value
Units
VIN
VOUT
VSHDN
tSC
TJ
TLEAD
VESD
VIN to GND
VOUT to GND
SHDN to GND
Output to GND Short-Circuit Duration
Operating Junction Temperature Range
Maximum Soldering Temperature (at leads, 10 sec)
ESD Rating1 — HBM
-0.3 to 6
V
-0.3 to 6
V
-0.3 to 6
V
Indefinite
s
-40 to 150
°C
300
°C
2000
V
Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. Functional operation at condi-
tions other than the operating conditions specified is not implied. Only one Absolute Maximum rating should be applied at any one time.
Note 1: Human body model is a 100pF capacitor discharged through a 1.5kΩ resistor into each pin.
Thermal Information
Symbol
Description
ΘJA
Maximum Thermal Resistance (SOT23-6 or SC70JW-8)
PD
Maximum Power Dissipation (SOT23-6 or SC70JW-8)
Note 2: Mounted on an FR4 board.
Rating
150
667
Units
°C/W
mW
Electrical Characteristics (TA = -40 to 85°C unless otherwise noted. Typical values are at TA=25°C,
CFLY=1µF, CIN=10µF, COUT=10µF)
AAT3111-3.3
Symbol Description
Conditions
Min
VIN
IQ
VOUT
ISHDN
VRIPPLE
η
fOSC
VIH
VIL
IIH
IIL
tON
ISC
Input Voltage
No Load Supply Current 3
Output Voltage
Shutdown Supply Current
Ripple Voltage
Efficiency
Frequency
SHDN Input Threshold High
SHDN Input Threshold Low
SHDN Input Current High
SHDN Input Current Low
VOUT Turn-on time
Short-circuit current 4
VOUT=3.3V
1.8V < VIN < 3.3V, IOUT=0mA, SHDN = VIN
1.8V < VIN < 3.3V, IOUT=20mA
2.5V < VIN < 3.3V, IOUT=100mA
1.8V < VIN < 3.3V, IOUT =0mA, VSHDN=0
VIN = 2.0V, IOUT = 50mA
VIN = 1.8V, IOUT = 25mA
Oscillator Free Running
SHDN = VIN
SHDN = GND
VIN = 1.8V, IOUT = 0mA
VIN = 1.8V, VOUT = GND, SHDN = 3V
1.8
3.17
3.17
1.4
-1
-1
Note 3: IQ = IVIN + IVOUT. VOUT is pulled up to 3.8V to prevent switching.
Typ Max Units
VOUT
V
20 30
µA
3.30 3.43
V
3.30 3.43
V
0.01 1
µA
20
mVP-P
91
%
750
kHz
V
0.3
V
1
µA
1
µA
0.2
ms
300
mA
3111.2002.3.0.91
3