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| AAT9512 Datasheet, PDF (2/6 Pages) Advanced Analogic Technologies – 28V N-Channel Power MOSFET | |||
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AAT9512
28V N-Channel Power MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Description
Conditions
Min Typ Max Units
DC Characteristics
BVDSS Drain-Source Breakdown Voltage
RDS(ON) Drain-Source ON-Resistance 2
ID(ON)
VGS(th)
IGSS
On-State Drain Current 2
Gate Threshold Voltage
Gate-Body Leakage Current
IDSS
Drain Source Leakage Current
gfs
Forward Transconductance 2
Dynamic Characteristics 3
VGS=0V, ID=250µA
VGS=4.5V, ID=4.5A
VGS=2.5V, ID=3.6A
VGS=4.5V, VDS=5V (Pulsed)
VGS=VDS, ID=250µA
VGS=±12V, VDS=0V
VGS=0V, VDS=28V
VGS=0V, VDS=23V, TJ=70°C
VDS=5V, ID=4.5A
28
V
36 48
57 76
mâ¦
20
A
0.6
V
±100 nA
1
5
µA
7
S
QG
Total Gate Charge
VDS=15V, RD=3.0â¦, VGS=4.5V
5
QGS
Gate-Source Charge
VDS=15V, RD=3.0â¦, VGS=4.5V
0.9
nC
QGD
Gate-Drain Charge
VDS=15V, RD=3.0â¦, VGS=4.5V
1
tD(ON)
Turn-ON Delay
VDD=15V, VGS=4.5V, RD=3.0â¦, RG=6â¦
6
tR
tD(OFF)
Turn-ON Rise Time
Turn-OFF Delay
VDD=15V, VGS=4.5V, RD=3.0â¦, RG=6â¦
3
ns
VDD=15V, VGS=4.5V, RD=3.0â¦, RG=6â¦
30
tF
Turn-OFF Fall Time
VDD=15V, VGS=4.5V, RD=3.0â¦, RG=6â¦
8
Source-Drain Diode Characteristics
VSD
Source-Drain Forward Voltage 2 VGS=0, IS=4.5A
IS
Continuous Diode Current 1
1.6
V
1.2
A
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1â x 1â PCB with optimized layout. A 5 second pulse
on a 1â x 1â PCB approximates testing a device mounted on a large multi-layer PCB as in many applications. RθJF + RθFA = RθJA
where the foot thermal reference is defined as the normal solder mounting surface of the deviceâs leads. RθJF is guaranteed by
design; however, RθFA is determined by PCB design. Actual maximum continuous current is limited by the applicationâs design.
Note 2: Pulse test: Pulse width = 300 µs.
Note 3: Guaranteed by design. Not subject to production testing.
2
9512.2003.04.0.61
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