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| AAT9512 Datasheet, PDF (1/6 Pages) Advanced Analogic Technologies – 28V N-Channel Power MOSFET | |||
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General Description
The AAT9512 is a low threshold MOSFET designed
for the battery, cell phone, and PDA markets. Using
AnalogicTechâ¢'s ultra high density MOSFET
process and space saving small outline J-lead pack-
age, performance superior to that normally found in
a TSOP-6 footprint has been squeezed into the foot-
print of a SC70 package.
Applications
⢠Battery Packs
⢠Cellular & Cordless Telephones
⢠Battery-powered portable equipment
AAT9512
28V N-Channel Power MOSFET
Features
⢠VDS(MAX) = 28V
⢠ID(MAX) 1 = 4.5A @ 25°C
⢠Low RDS(ON):
⢠48 m⦠@ VGS = 4.5V
⢠76 m⦠@ VGS = 2.5V
SC70JW-8 Package
Top View
DDDD
8765
1234
SSSG
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=150 C 1
Pulsed Drain Current 2
TA = 25°C
TA = 70°C
Continuous Source Current (Source-Drain Diode) 1
Maximum Power Dissipation 1
TA = 25°C
TA = 70°C
Operating Junction and Storage Temperature Range
Value
28
±12
±4.5
±3.6
±20
1.2
1.6
1.0
-55 to 150
Thermal Characteristics
Symbol
RθJA
RθJA2
RθJF
Description
Typical Junction-to-Ambient steady state 1
Maximum Junction-to-Ambient t<5 seconds 1
Typical Junction-to-Foot 1
Value
102
78
35
Units
V
A
W
°C
Units
°C/W
°C/W
°C/W
9512.2003.04.0.61
1
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