AAT9121 Datasheet, PDF (2/4 Pages) Advanced Analogic Technologies – 30V N-Channel Power MOSFET

AAT9121
30V N-Channel Power MOSFET
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol Description
Conditions
Min
DC Characteristics
BV_DSS Drain-Source Breakdown Voltage V_GS=0V, I_D=250µA
30
R_DS(ON) Drain-Source ON-Resistance ²
V_GS=10V, I_D=8A
V_GS=4.5V, I_D=6.6A
I_D(ON) On-State Drain Current ²
V_GS=10V ,V_DS=5V (Pulsed)
24
V_GS(th) Gate Threshold Voltage
V_GS=V_DS, I_D=250µA
1.0
I_GSS
Gate-Body Leakage Current
V_GS=±20V, V_DS=0V
I_DSS
Drain Source Leakage Current
V_GS=0V,V_DS=30V
V_GS=0V,V_DS=30V, T_J=55°C
g_fs
Forward Transconductance ²
V_DS=15V, I_D=8A
Dynamic Characteristics ³
Q_G
Total Gate Charge
Q_GT
Total Gate Charge
Q_GS
Gate-Source Charge
Q_GD
Gate-Drain Charge
t_D(ON)
Turn-ON Delay
t_R
Turn-ON Rise Time
t_D(OFF) Turn-OFF Delay
t_F
Turn-OFF Fall Time
Source-Drain Diode Characteristics
V_DS=15V, I_D=8A, V_GS=5V
V_DS=15V, I_D=8A, V_GS=10V
V_DS=15V, I_D=8A, V_GS=10V
V_DS=15V, I_D=8A, V_GS=10V
V_DD=15V, V_GS=10V, R_D=1.8Ω , R_G=6Ω
V_DD=15V, V_GS=10V, R_D=1.8Ω , R_G=6Ω
V_DD=15V, V_GS=10V, R_D=1.8Ω , R_G=6Ω
V_DD=15V, V_GS=10V, R_D=1.8Ω , R_G=6Ω
V_SD
Source-Drain Forward Voltage ² V_GS=0, I_S=2.25A
I_S
Continuous Diode Current ²
T_A=25ºC
Note 2: Pulse test: Pulse Width = 300µs
Note 3: Guaranteed by design. Not subjected to production testing.
Typ
16
28
15
10.5
20.5
3.8
2.9
9
12
38
19
Max
24
35
±100
1
5
16
28
15
20
55
28
1.1
2.25
Units
V
mΩ
A
V
nA
µA
S
nC
nC
nC
nC
ns
ns
ns
ns
V
A
2
9121.2001.12.0.9