 English |
|
|
|
|
|
|
|
| AAT9121 Datasheet, PDF (1/4 Pages) Advanced Analogic Technologies – 30V N-Channel Power MOSFET | |||
| |||
|
General Description
The AAT9121 30V N-Channel Power MOSFET is a
member of AnalogicTech's TrenchDMOS⢠prod-
uct family. Using the ultra-high density proprietary
TrenchDMOS technology, this product demon-
strates high power handling and small size.
Applications
⢠DC-DC converters for mobile CPUs
⢠Battery-powered portable equipment
⢠High power density DC - DC supplies
⢠Power supplies
AAT9121
30V N-Channel Power MOSFET
Features
PWMSwitchâ¢
⢠VDS(MAX) = 30V
⢠ID(MAX) = 8A @ 25°C
⢠Low Gate Charge
⢠Low RDS(ON):
⢠24 m⦠@VGS = 10V
⢠35 m⦠@ VGS = 4.5V
SOP-8 Package
Top View
DDDD
8765
1234
SSSG
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=150°C 1
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Source-Drain Diode) 1
Maximum Power Dissipation 1
TA = 25°C
TA = 70°C
Operating Junction and Storage Temperature Range
Value
30
±20
±8.0
±6.4
±24
2.25
2.5
1.6
-55 to 150
Units
V
A
W
°C
Thermal Characteristics
Symbol
Description
RθJA
Typical Junction-to-Ambient 1
RθJC
Typical Junction-to-Case
Note 1: Mounted on 1â x 1â FR4 Copper Board, 10 sec pulse width.
Value
50
28
Units
°C/W
°C/W
9121.2001.12.0.9
1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese