AAT9060 Datasheet, PDF (2/6 Pages) Advanced Analogic Technologies – 30V N-Channel Power MOSFET

AAT9060
30V N-Channel Power MOSFET
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol Description
DC Characteristics
BV_DSS Drain-Source Breakdown Voltage
R_DS(ON) Drain-Source ON-Resistance ³
I_D(ON)
V_GS(th)
I_GSS
On-State Drain Current ³
Gate Threshold Voltage
Gate-Body Leakage Current
I_DSS
Drain Source Leakage Current
g_fs
Forward Transconductance ³
Dynamic Characteristics ⁴
Q_G
Total Gate Charge
Q_GT
Total Gate Charge
Q_GS
Gate-Source Charge
Q_GD
Gate-Drain Charge
t_D(ON) Turn-ON Delay
t_R
Turn-ON Rise Time
t_D(OFF) Turn-OFF Delay
t_F
Turn-OFF Fall Time
Source-Drain Diode Characteristics
V_SD
Source-Drain Forward Voltage ³
I_S
Continuous Diode Current ¹
Notes:
Conditions
V_GS=0V, I_D=250µA
V_GS=10V, I_D=25A
V_GS=4.5V, I_D=19A
V_GS=10V, V_DS=5V (Pulsed)
V_GS=V_DS, I_D=250µA
V_GS=±20V, V_DS=0V
V_GS=0V, V_DS=30V
V_GS=0V, V_DS=30V, T_J=70°C ⁴
V_DS=5V, I_D=9A
V_DS=15V, R_D=1.3Ω, V_GS=5V
V_DS=15V, R_D=1.3Ω, V_GS=10V
V_DS=15V, R_D=1.3Ω, V_GS=10V
V_DS=15V, R_D=1.3Ω, V_GS=10V
V_DD=15V, R_D=1.3Ω, V_GS=10V, R_G=6Ω
V_DD=15V, R_D=1.3Ω, V_GS=10V, R_G=6Ω
V_DD=15V, R_D=1.3Ω, V_GS=10V, R_G=6Ω
V_DD=15V, R_D=1.3Ω, V_GS=10V, R_G=6Ω
V_GS=0, I_S=20A
Min
30
60
1.0
Typ
13
21
20
13
25
4
3.5
12
38
21
32
Max Units
V
16
27
mΩ
A
V
±100 nA
1
25
µA
S
16
32
nC
ns
2
V
20
A
1. Based on thermal dissipation from junction to case. R_θJC + R_θCA = R_θJA where the case thermal reference is defined as the solder
mounting surface of the drain tab. R_θJC is guaranteed by design, however R_θCA is determined by the PCB design. Package current is
limited to 30A DC and 60A pulsed.
2. Mounted on typical computer main board.
3. Pulse measurement 300 µs.
4. Guaranteed by design. Not subject to production testing.
2
9060.2003.05.0.9