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| AAT9060 Datasheet, PDF (1/6 Pages) Advanced Analogic Technologies – 30V N-Channel Power MOSFET | |||
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General Description
The AAT9060 30V N-Channel Power MOSFET is a
member of AnalogicTechâ¢'s TrenchDMOSâ¢
product family. Using the ultra-high density propri-
etary TrenchDMOS technology, this product
demonstrates high power handling and small size.
Applications
⢠DC-DC converters
⢠High current load switches
⢠LDO output
AAT9060
30V N-Channel Power MOSFET
Features
PWMSwitchâ¢
⢠VDS(MAX) = 30V
⢠ID(MAX)1 = 39A @ TC = 25°C
⢠IAPP(MAX) = 12.5A in typical computer application
⢠Low RDS(ON):
⢠16 m⦠@VGS = 10V
⢠27 m⦠@VGS = 4.5V
DPAK Package
Drain-Connected Tab
G
S
Absolute Maximum Ratings (TC=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=150°C 1
Pulsed Drain Current 3
TC = 25°C
TC = 70°C
Continuous Source Current (Source-Drain Diode) 1
Maximum Power Dissipation 1
TC = 25°C
TC = 70°C
Operating Junction and Storage Temperature Range
Value
30
±20
±39
±31
±60
20
41
26
-55 to 150
Units
V
A
W
°C
Thermal Characteristics
Symbol
RθJA
RTYP
RθJC
Description
Maximum Junction-to-Ambient
Typical Junction to ambient on PC board 2
Maximum Junction-to-Case
9060.2003.05.0.9
Value
96
24
3
Units
°C/W
°C/W
°C/W
1
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