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AAT7357 Datasheet, PDF (2/6 Pages) Advanced Analogic Technologies – 20V P-Channel Power MOSFET
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AAT7357
20V P-Channel Power MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Description
Conditions
Min Typ Max Units
DC Characteristics
BVDSS Drain-Source Breakdown Voltage
RDS(ON) Drain-Source ON-Resistance 2
ID(ON)
VGS(th)
IGSS
On-State Drain Current 2
Gate Threshold Voltage
Gate-Body Leakage Current
IDSS
Drain Source Leakage Current
gfs
Forward Transconductance 2
Dynamic Characteristics 3
VGS=0V, ID=-250µA
VGS=-4.5V, ID=-5A
VGS=-2.5V, ID=-4A
VGS=-4.5V, VDS=-5V (Pulsed)
VGS=VDS, ID=-250µA
VGS=±12V, VDS=0V
VGS=0V, VDS=-20V
VGS=0V, VDS=-16V, TJ=70°C 3
VDS=-5V, ID=-5A
-20
V
30 39
49 63
mΩ
-12
A
-0.6
V
±100 nA
-1
-5
µA
12
S
QG
Total Gate Charge
VDS=-10V, RD=2.0Ω, VGS=-4.5V
14
QGS
Gate-Source Charge
VDS=-10V, RD=2.0Ω, VGS=-4.5V
3.5
nC
QGD
Gate-Drain Charge
VDS=-10V, RD=2.0Ω, VGS=-4.5V
5.6
tD(ON)
Turn-ON Delay
VDS=-10V, RD=2.0Ω, VGS=-4.5V, RG=6Ω
TBD
tR
tD(OFF)
Turn-ON Rise Time
Turn-OFF Delay
VDS=-10V, RD=2.0Ω, VGS=-4.5V, RG=6Ω
TBD
ns
VDS=-10V, RD=2.0Ω, VGS=-4.5V, RG=6Ω
TBD
tF
Turn-OFF Fall Time
VDS=-10V, RD=2.0Ω, VGS=-4.5V, RG=6Ω
TBD
Source-Drain Diode Characteristics
VSD
Source-Drain Forward Voltage 2 VGS=0, IS=-5A
IS
Continuous Diode Current 1
-1.2
V
-1.3
A
Notes:
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design, however
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300 µs
3. Guaranteed by design. Not subject to production testing.
2
7357.2003.08.0.6
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