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| AAT7357 Datasheet, PDF (1/6 Pages) Advanced Analogic Technologies – 20V P-Channel Power MOSFET | |||
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General Description
The AAT7357 is a low threshold dual MOSFET
designed for the battery, cell phone, and PDA mar-
kets. Using AnalogicTechâ¢'s ultra high density
MOSFET process and space saving small outline J-
lead package, performance superior to that normal-
ly found in a TSSOP-8 footprint has been squeezed
into the footprint of a TSOPJW-8 package.
Applications
⢠Battery Packs
⢠Cellular & Cordless Telephones
⢠Battery-powered portable equipment
AAT7357
20V P-Channel Power MOSFET
Features
⢠VDS(MAX) = -20V
⢠ID(MAX) 1 = -5A @ 25°C
⢠Low RDS(ON):
⢠39 m⦠@ VGS = -4.5V
⢠63 m⦠@ VGS = -2.5V
Dual TSOPJW-8 Package
Top View
D1 D1 D2 D2
8765
1234
S1 G1 S2 G2
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=150°C 1
Pulsed Drain Current 2
Continuous Source Current (Source-Drain Diode) 1
Maximum Power Dissipation 1
Operating Junction and Storage Temperature Range
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Value
-20
±12
±5
±4
±12
-1.3
1.6
1.0
-55 to 150
Units
V
A
W
°C
Thermal Characteristics
Symbol
RθJA
RθJA2
RθJF
Description
Junction-to-Ambient steady state, one FET on 1
Junction-to-Ambient t<5 seconds 1
Junction-to-Foot 1
Typ
Max
Units
115
140
°C/W
64
78
°C/W
60
72
°C/W
7357.2003.08.0.6
1
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