AAT7103 Datasheet, PDF (2/4 Pages) Advanced Analogic Technologies – 25V N-Channel Power MOSFET

AAT7103
25V N-Channel Power MOSFET
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol Description
Conditions
Min Typ Max Units
DC Characteristics
BV_DSS Drain-Source Breakdown Voltage
R_DS(ON) Drain-Source ON-Resistance ³
ID(ON)
V_GS(th)
I_GSS
On-State Drain Current ³
Gate Threshold Voltage
Gate-Body Leakage Current
I_DSS Drain Source Leakage Current
g_fs
Forward Transconductance ³
Dynamic Characteristics ⁴
V_GS=0V, I_D=250µA
V_GS=4.5V, I_D=6.8A
V_GS=2.5V, I_D=5.4A
V_GS=4.5V ,V_DS=5V (Pulsed)
V_GS=V_DS, I_D=250µA
V_GS= ±12V, V_DS=0V
V_GS=0V, V_DS=25V
V_GS=0V, V_DS=20V, T_J=70°C
V_DS=5V, I_D=6.8A
25
V
19
28
26
41
mΩ
24
A
0.6
V
±100 nA
1
5
µA
20
S
Q_G Total Gate Charge
Q_GS Gate-Source Charge
Q_GD Gate-Drain Charge
t_D(ON) Turn-ON Delay
t_R
Turn-ON Rise Time
t_D(OFF) Turn-OFF Delay
t_F
Turn-OFF Fall Time
Source-Drain Diode Characteristics
V_DS=15V, R_D=2.2Ω, V_GS=4.5V
V_DS=15V, R_D=2.2Ω, V_GS=4.5V
V_DS=15V, R_D=2.2Ω, V_GS=4.5V
V_DD=15V, V_GS=10V, R_D=2.2Ω, RG=6Ω
V_DD=15V, V_GS=10V, R_D=2.2Ω, RG=6Ω
V_DD=15V, V_GS=10V, R_D=2.2Ω, RG=6Ω
V_DD=15V, V_GS=10V, R_D=2.2Ω, RG=6Ω
13 19
1.9
nC
2.9
15
18
36
ns
27
V_SD Source-Drain Forward Voltage ³ V_GS=0, I_S=6.8A
I_S
Continuous Diode Current ¹
1.5
V
1.8
A
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1” x 1” PCB with optimized layout. A 10 second pulse
on a 1” x 1” PCB approximates testing a device mounted on a large multi-layer PCB as in many applications. R_θJF + R_θFA = R_θJA
where the foot thermal reference is defined as the normal solder mounting surface of the device’s leads. R_θJF is guaranteed by
design; however, R_θFA is determined by PCB design. Actual maximum continuous current is limited by the application’s design.
Note 2: Steady state thermal response while mounted on a 1” x 1” PCB with maximum copper area is provided for comparison with
other devices. This test condition approximates many battery pack applications.
Note 3: Pulsed measurement 300 µs, single pulse.
Note 4: Guaranteed by design. Not subject to production testing.
2
7103.2003.04.0.61