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| AAT7103 Datasheet, PDF (1/4 Pages) Advanced Analogic Technologies – 25V N-Channel Power MOSFET | |||
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General Description
The AAT7103 25V N-Channel Power MOSFET is a
member of AnalogicTechâ¢'s TrenchDMOSâ¢
product family. Using the ultra-high density propri-
etary TrenchDMOS technology, the product
demonstrates high power handling and small size.
AAT7103
25V N-Channel Power MOSFET
Features
⢠VDS(MAX) = 25V
⢠ID(MAX)(1) = 6.8 A @ 25°C
⢠Low RDS(ON):
⢠26 m⦠@VGS = 4.5V
⢠41 m⦠@VGS = 2.5V
Applications
⢠Battery Packs
⢠Cellular & Cordless Telephones
⢠PDAs, Camcorders, and Cell Phones
Dual SOP-8 Package
Top View
D1 D1 D2 D2
8765
1234
S1 G1 S2 G2
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=150°C 1
Pulsed Drain Current 3
TA = 25°C
TA = 70°C
Continuous Source Current (Source-Drain Diode) 1
Maximum Power Dissipation 1
TA = 25°C
TA = 70°C
Operating Junction and Storage Temperature Range
Thermal Characteristics
Symbol
RθJA
RθJA2
RθJF
Description
Typical Junction-to-Ambient steady state, one FET on 2
Maximum Junction-to-Ambient Figure, t < 10 sec. 1
Typical Junction-to-Foot, one FET on 1
Value
25
±12
±6.8
±5.4
±24
1.8
2.0
1.25
-55 to 150
Value
100
62.5
35
Units
V
A
W
°C
Units
°C/W
°C/W
°C/W
7103.2003.04.0.61
1
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