AWT6166 Datasheet, PDF (5/12 Pages) ANADIGICS, Inc – GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control

AWT6166
Table 7: Electrical Characteristics for GSM850
(VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH)
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Operating Frequency (Fo)
824
-
849 MHz
Input Power
0
3.0
5
dBm
Output Power, PMAX
Degraded Output Power
PAE @ PMAX
34.5 35.0
-
dBm Freq = 824 to 849 MHz
32.5 33.5
-
dBm
VBATT = 3.0 V, TC = 85 ^OC,
PIN = 0 dBm
-
54
-
% Freq = 824 to 849 MHz
Forward Isolation 1
-
-35
-
dBm
TX_EN = LOW, VRAMP = 0.2 V
PIN = 5 dBm,
Forward Isolation 2
-
-25
-
dBm
TX_EN = HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
Cross Isolation
(2Fo @ DCS/PCS Port)
-
-30
-
dBm VRAMP = 0.2 V to 1.6 V
Harmonics
2fo
n*Fo, (n > 3), Fo [ 12.75 GHz
-
-
-25
-30
-
-
dBm Over all output power levels
VSWR = 8:1 All Phases, POUT [ 34.5 dBm
Stability
-
-
-36 dBm FOUT < 1 GHz
-
-
-30 dBm FOUT > 1 GHz
Ruggedness
-
-
10:1
VSWR
All load phases,
POUT < 34.5 dBm
RX Noise Power
FTX = 849 MHz,
-
-87
-
dBm
RBW = 100 kHz,
FRX = 869 to 894 MHz,
POUT [ 34.5 dBm
Input VSWR
-
1.5:1
-
- Over all output power levels
ADVANCED PRODUCT INFORMATION - Rev 0.3
5
01/2005