AWT6166 Datasheet, PDF (1/12 Pages) ANADIGICS, Inc – GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control

FEATURES
• Integrated Vreg (regulated supply)
• Harmonic Performance ≤ -25 dBm
• High Efficiency (PAE) at Pmax:
-GSM850, 54%
-GSM900, 56%
-DCS, 53%
-PCS, 51%
• +35 dBm GSM850/900 Output Power at 3.5 V
• +33 dBm DCS/PCS Output Power at 3.5 V
• 55 dB dynamic range
• GPRS Class 12 Capable
AWT6166
GSM850/GSM900/DCS/PCS
Quad Band Power Amplifier Module
With Integrated Power Control
ADVANCED PRODUCT INFORMATION - Rev 0.3
APPLICATIONS
• Dual/Tri/Quad Band Handsets & PDAs
18 Pin
6 mm x 6 mm x 1.3 mm
Amplifier Module
PRODUCT DESCRIPTION
As with previous generations, the AWT6166
integrated CMOS power control scheme simplifies
the design of the transmitter by eliminating the need
for external power control circuitry.
The AWT6166 input and output terminals are internal
matched to 50 ohms and DC blocked, reducing the
number of external components required in the final
application. Both PA die, GSM850/900 and DCS/
PCS, are fabricated using state of the art InGaP HBT
technology, known for it is proven reliability and
temperature stability.
V_CC2
DCS/PCS_IN
B_S
TX _EN
V_BATT
C_EXT
V_RAMP
GSM850/900_IN
MATCH
CMOS BIAS/Integrated Power Control
H(s)
MATCH
MATCH
MATCH
V_CC2
Figure 1: Block Diagram
01/2005
DCS/PCS
OUT
V_{CC_OUT}
GSM850/900_OUT