ALT5020 Datasheet, PDF (4/10 Pages) ANADIGICS, Inc – High Efficiency UMTS E800 (Band 20) LTE Linear PAM

ALT5020
Table 4: Electrical Specifications - LTE Operation (RB = 12, START = 0, QPSK)
(TC = +25 °C, VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system, unless otherwise specified)
PARAMETER
COMMENTS
MIN TYP MAX UNIT
POUT
VCC
VMODE1 VMODE2
Gain
26.5 30 33
18 22 25
14 17 21
+27.7 dBm 3.4 V 0 V
0V
dB +16 dBm 1.4 V 1.8 V 0 V
+7 dBm
0.7 V 1.8 V 1.8 V
ACLR E-UTRA ⁽¹⁾
at ± 10 MHz offset
-
-38 -34
+27.7 dBm 3.4 V 0 V
0V
-
-38 -34 dBc +16 dBm 1.4 V 1.8 V 0 V
-
-40 -34
+7 dBm
0.7 V 1.8 V 1.8 V
ACLR1 UTRA ⁽¹⁾
at ± 7.5 MHz offset
-
-39 -36
+27.7 dBm 3.4 V 0 V
0V
-
-39 -36 dBc +16 dBm 1.4 V 1.8 V 0 V
-
-40 -36
+7 dBm
0.7 V 1.8 V 1.8 V
ACLR2 UTRA ⁽¹⁾
at ± 12.5 MHz offset
- <-60 -40
+27.7 dBm 3.4 V 0 V
0V
- <-60 -40 dBc +16 dBm 1.4 V 1.8 V 0 V
- <-60 -40
+7 dBm
0.7 V 1.8 V 1.8 V
Efficiency ⁽¹⁾
33 38
-
-
22
-
-
13
-
+27.7 dBm 3.4 V 0 V
0V
% +16 dBm 1.4 V 1.8 V 0 V
+7 dBm
0.7 V 1.8 V 1.8 V
Quiescent Current (Icq)
Low Bias Mode
-
25
-
mA through VCC pin, VMODE1,2 = +1.8 V
Mode Control Current
- 0.05 0.1
mA through VMODE pin, VMODE1 = 1.8 V
Enable Current
- 0.05 0.1
mA through VENABLE pin
BATT Current
-
3
5.5
mA through VBATT pin, VMODE1 = +1.8 V
Leakage Current
-
<5 10
µA
VBATT = +4.4 V, VCC = +4.4 V
VENABLE = 0 V, VMODE1 = 0 V
Noise in Receive Band ⁽²⁾
- TBD - dBm/Hz 791 - 821 MHz
Harmonics
2fO
3fO, 4fO
- TBD -
- TBD -
dBc POUT < +27.7 dBm
Input Impedance
-
-
2:1 VSWR
Coupling Factor
-
20
-
dB
Directivity
-
20
-
dB
Coupler IN-OUT
Daisy Chain Insertion Loss
- <0.25 -
698 to 2620 MHz
dB Pin 8 to 6
Shutdown Mode
Spurious Output Level
(all suprious outputs)
POUT < +27.7 dBm
-
-
<-65
dBc
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
Load mismatch stress with
no permanent degradation or 8:1
-
failure
- VSWR Applies over full operating range
Notes:
(1) ACLR and Efficiency measured at 847 MHz.
4
advanced product information - Rev 0.0
09/2013