ALT5020 Datasheet, PDF (3/10 Pages) ANADIGICS, Inc – High Efficiency UMTS E800 (Band 20) LTE Linear PAM

ALT5020
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
TYP MAX UNIT
RF Input (PIN)
-
0
10
dBm
VCC
0
3.4
5
V
VBATT
0
3.4
6
V
Control Voltage (VENABLE, VMODE)
0
1.8
3.5
V
Storage Temperature (TSTORAGE)
-40
25
150
°C
Functional operation to the specified performance is not implied under these conditions.
Operation of any single parameter in excess of the absolute ratings may cause permanent
damage. No damage occurs if one parameter is set at the limit while all other parameters
are set within normal operating ranges.
Table 3: Operating Ranges
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Operating Frequency (f)
832
-
862 MHz UMTS Band 20
Supply Voltage (VCC)
+0.6 +3.4 +4.4
V
POUT < +27.7 dBm
Battery Voltage (VBATT)
+3.1 +3.4 +4.4
V
POUT < +27.7 dBm
Enable Voltage (VENABLE)
+1.35
0
+1.8 +3.1
0 +0.5
V
PA “on”
PA “shut down”
Mode Control Voltage (VMODE1)
+1.35
0
+1.8 +3.1
0 +0.5
V
Low Bias Mode
High Bias Mode
RF Output Power (POUT) ^{(1, 2, 3)}
LTE, HPM
LTE, LPM
26.9 27.7
-
-
16
-
dBm TS 36.101 Rel 8 for LTE
Case Temperature (TC)
-30
-
+90
°C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) For operation at Vcc = +3.1 V, Pout is derated by 0.8 dB.
(2) For operation at 105 °C, POUT is derated by 1.0 dB.
(3) LTE waveform characteristics up to 20 MHz QPSK, 18 RB’s.
3
advanced product information - Rev 0.0
09/2013