AWT6302R Datasheet, PDF (1/10 Pages) ANADIGICS, Inc – PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

FEATURES
• InGaP HBT Technology
• High Efficiency:
39%, VMODE = 0 V
40%, VMODE = +2.85 V (no mode switching)
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• VREF = +2.85 V (+2.75 V min over temp)
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package:
1.1 mm
• CDMA 1XRTT, 1xEV-DO Compliant
• Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
• RoHS-Compliant Package, 250 ^oC MSL-3
APPLICATIONS
• CDMA/EVDO PCS-band Wireless Handsets and
Data Devices
AWT6302R
PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
Data Sheet - Rev 2.1
M9 Package
8 Pin 3 mm x 3 mm x 1.1 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6302R meets the increasing demands for
higher efficiency and linearity in CDMA 1X handsets,
while reducing pcb area by 44%. The package pinout
was chosen to enable handset manufacturers to
switch from a 4 mm x 4 mm PA module with very few
layout changes to the phone board. The PA module is
optimized for VREF = +2.85 V. The device is manufactured
on an advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
3 mm x 3 mm x 1.1 mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50 Ω system.
GND at slug (pad)
VCC ¹
8 VCC
RFIN 2
7 RFOUT
VMODE 3
Bias Control
6 GND
VREF 4
5 GND
Figure 1: Block Diagram
09/2008