ALT6720 Datasheet, PDF (1/9 Pages) ANADIGICS, Inc – HELP4 E800 (Band 20) LTE Linear PAM

FEATURES
• LTE Compliant
• 4th Generation HELP^TM technology
• High Efficiency (LTE MPR = 0 dB):
•36 % @ POUT = +27.5 dBm
•23 % @ POUT = +16 dBm
•16 % @ POUT = +7 dBm
• Low Quiescent Current: 3 mA
• Low Leakage Current in Shutdown Mode: <5 µA
• Internal Voltage Regulator
• Integrated “daisy chainable” directional coupler
with CPLIN and CPLOUT port.
• Internal DC block on IN/OUT RF ports
• Optimized for a 50 Ω System
• 1.8 V Control Logic
• RoHS Compliant Package, 260 ^oC MSL-3
ALT6720
HELP4^TM E800 (Band 20)
LTE Linear PAM
Data Sheet - Rev 2.3
ALT6720
M45 Package
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
APPLICATIONS
• Band 20 LTE Wireless Devices
PRODUCT DESCRIPTION
The ALT6720HELP4^TM PA is a 4th generation HELP^TM
product for LTE devices operating in E800 MHz Band
20. This PA incorporates ANADIGICS’ HELP4^TM
VBATT
1
technology to deliver exceptional efficiency at low
power levels and low quiescent current without the
need for external voltage regulators or converters. RFIN ²
The device is manufactured using advanced InGaP-
Plus^TM HBT technology offering state-of-the-art
reliability, temperature stability, and ruggedness. _VMODE2 3
Three selectable bias modes that optimize efficiency
for different output power levels and a shutdown
mode with low leakage current increase handset
talk and standby time. A “daisy chainable” directional
VMODE1
4
coupler is integrated in the module, thus eliminating
the need of an external coupler. The self-contained
3 mm x 3 mm x 1 mm surface mount package
VEN ⁵
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50 Ω system.
GND at Slug (pad)
10 _VCC
CPL
9
RFOUT
Bias Control
Voltage Regulation
8 _CPLIN
7 _GND
6 _CPLOUT
Figure 1: Block Diagram
03/2012