AF8958C Datasheet, PDF (3/4 Pages) Anachip Corp – P & N-Channel 30-V (D-S) MOSFET

P & N-Channel 30-V (D-S) MOSFET
AF8958C
Specifications (T_A=25ºC unless otherwise noted)
Symbol
Parameter
Test Conditions
Ch
Limits
Min. Typ.
Max.
Unit
Dynamic
Q_g Total Gate Charge
Q_gs Gate-Source Charge
N-Channel
N
- 10.7 26
V_DS=15V, V_GS=10V
P
-
10 13
I_D=7A
P-Channel
N
P
-
1.7
-
-
2.2
-
nC
Q_gd Gate-Drain Charge
V_DS=-15V, V_GS=-10V _N
I_D=-5A
P
-
2.1
-
-
1.7
-
Switching
t_d(on) Turn-On Delay Time
N-Channel
N
-
8
16
P
-
7
14
t_r
Rise Time
t_d(off) Turn-Off Delay Time
t_f
Fall-Time
V_DD=15, V_GS=10V
N
I_D=1A, R_GEN=6Ω
P
P-Channel
N
V_DD=-15, V_GS=-10V
P
I_D=-1A, R_GEN=6Ω
N
P
-
5
10
-
-
13
23
24
37
nS
-
14 25
-
3
6
9
17
Note 3: Pulse test: PW < 300us duty cycle < 2%.
Note 4: Guaranteed by design, not subject to production testing.
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Jul 16, 2004
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