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AF8958C Datasheet, PDF (1/4 Pages) Anachip Corp – P & N-Channel 30-V (D-S) MOSFET
P & N-Channel 30-V (D-S) MOSFET
AF8958C
Features
-Low rDS(on) Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Low side high current DC-DC Converter
applications
General Description
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWM DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
Product Summary
VDS (V)
30
-30
rDS(on) (mΩ)
40@VGS=4.5V
28@VGS=10V
80@VGS=-4.5V
52@VGS=-10V
ID (A)
6.0
7.0
-4.0
-5.2
Pin Assignments
Pin Descriptions
S1 1
G1 2
S2 3
G2 4
SOP-8
8 D1
7 D1
6 D2
5 D2
Pin Name
S1
G1
D1
S2
G2
D2
Description
Source (NMOS)
Gate (NMOS)
Drain (NMOS)
Source (PMOS)
Gate (PMOS)
Drain (PMOS)
Ordering information
A X 8958C X X X
Feature
PN
F :MOSFET
Package
S: SOP-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Jul 16, 2004
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