TMD27721 Datasheet, PDF (5/35 Pages) TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS – DIGITAL ALS and PROXIMITY MODULE

TMD2772
DIGITAL ALS
and PROXIMITY MODULE
TAOS147E − DECEMBER 2012
Operating Characteristics, V_DD = 3 V, T_A = 25 C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Active — LDR pulse off
195
250
I_DD
Supply current
Wait state
Sleep state — no I²C activity
90
μA
2.2
4
3 mA sink current
0
0.4
V_OL INT, SDA output low voltage
I _LEAK Leakage current, SDA, SCL, INT pins
I _LEAK Leakage current, LDR pin
lid ^VIH
SCL, SDA input high voltage
a ^VIL
SCL, SDA input low voltage
6 mA sink current
TMD27721
TMD27723
TMD27721
TMD27723
0
−5
−5
0.7 V_DD
1.25
0.6
V
5 μA
5 μA
V
0.3 V_DD
0.54
V
v _{ALS Characteristics,}
ill ^{(Notes 1 ,2, 3)}
V_DD
=
3
V,
T_A
=
25
C, AGAIN
= 16
,
AEN = 1 (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
CHANNEL
MIN TYP MAX UNIT
t Dark ADC count value
E_e = 0, AGAIN = 120×,
ATIME = 0xDB (100 ms)
CH0
CH1
0
1
0
1
5
5 ^counts
G _s ADC integration time step size
ATIME = 0xFF
2.58 2.73
2.9 ms
ADC number of integration steps
1
256 steps
A ^t ADC counts per step
ATIME = 0xFF
0
1024 counts
ADC count value
ATIME = 0xC0
0
65535 counts
ms ^{ten ADC count value}
λ_p = 625 nm, E_e = 46.8 μW/cm²,
ATIME = 0xF6 (27 ms) (Note 2)
λ_p = 850 nm, E_e = 61.7 μW/cm²,
ATIME = 0xF6 (27 ms) (Note 3)
CH0
CH1
CH0
CH1
4000
4000
5000
950
5000
2900
6000
6000 ^counts
a ⁿ ADC count value ratio: CH1/CH0
l ^{co Re Irradiance responsivity}
λ_p = 625 nm, ATIME = 0xF6 (27 ms) (Note 2)
λ_p = 850 nm, ATIME = 0xF6 (27 ms) (Note 3)
λ_p = 625 nm, ATIME = 0xF6 (27 ms)
(Note 2)
CH0
CH1
λ_p = 850 nm, ATIME = 0xF6 (27 ms)
(Note 3)
CH0
CH1
AGAIN = 1× and AGL = 1
0.152
0.43
0.19
0.58
107.2
20.4
81.5
47.3
0.16
0.228
0.73
counts/
(μW/
cm²)
a _{Gain scaling, relative to 1× gain}
ic ^setting
AGAIN = 8× and AGL = 0
AGAIN = 16× and AGL = 0
AGAIN = 120× and AGL = 0
7.2 8.0
8.8
×
14.4 16.0
17.6
108 120
132
NOTES: 1. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Red 625 nm and
n ^{infrared 850 nm LEDs are used for final product testing for compatibility with high-volume production.}
2. The 625 nm irradiance E_e is supplied by an AlInGaP light-emitting diode with the following typical characteristics: peak wavelength
λp = 625 nm and spectral halfwidth Δλ½ = 20 nm.
h _{3. The 850 nm irradiance Ee is supplied by a GaAs light-emitting diode with the following typical characteristics: peak wavelength}
Tec ^{λp = 850 nm and spectral halfwidth Δλ½ = 42 nm.}
Copyright 2012, TAOS Inc.
4
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The LUMENOLOGY Company