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AMS73CAG01808RA Datasheet, PDF (1/31 Pages) Advanced Monolithic Systems Ltd – HIGH PERFORMANCE 1Gbit DDR3 SDRAM
AMS73CAG01808RA
HIGH PERFORMANCE 1Gbit DDR3 SDRAM
8 BANKS X 16Mbit X 8
Clock Cycle Time ( tCK6, CWL=5 )
Clock Cycle Time ( tCK7, CWL=6 )
Clock Cycle Time ( tCK8, CWL=6 )
Clock Cycle Time ( tCK9, CWL=7 )
Clock Cycle Time ( tCK10, CWL=7 )
System Frequency (fCK max)
- H7
DDR3-1066
2.5 ns
1.875 ns
1.875 ns
-
-
533 MHz
AMS73CAG01808RA
- I9
DDR3-1333
2.5 ns
1.875 ns
1.875 ns
1.5 ns
1.5 ns
667 MHz
Specifications
- Density : 1G bits
- Organization : 16M words x 8 bits x 8 banks
- Package :
- 78-ball FBGA
- Lead-free (RoHS compliant) and Halogen-free
- Power supply : VDD, VDDQ = 1.5V ± 0.075V
- Data rate : 1333Mbps/1066Mbps (max.)
- 1KB page size
- Row address: A0 to A13
- Column address: A0 to A9
- Eight internal banks for concurrent operation
- Interface : SSTL_15
- Burst lengths (BL) : 8 and 4 with Burst Chop (BC)
- Burst type (BT) :
- Sequential (8, 4 with BC)
- Interleave (8, 4 with BC)
- CAS Latency (CL) : 5, 6, 7, 8, 9, 10, 11
- CAS Write Latency (CWL) : 5, 6, 7, 8
- Precharge : auto precharge option for each burst ac-
cess
- Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
- Refresh : auto-refresh, self-refresh
- Refresh cycles :
- Average refresh period
7.8 μs at 0°C ≤ Tc ≤ +85°C
3.9 μs at +85°C < Tc ≤ +95°C
- Operating case temperature range
- Tc = 0°C to +95°C
Features
- Double-data-rate architecture; two data transfers per
clock cycle
- The high-speed data transfer is realized by the 8 bits
prefetch pipelined architecture
- Bi-directional differential data strobe (DQS and DQS)
is transmitted/received with data for capturing data at
the receiver
- DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
- Differential clock inputs (CK and CK)
- DLL aligns DQ and DQS transitions with CK transitions
- Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
- Data mask (DM) for write data
- Posted CAS by programmable additive latency for bet-
ter command and data bus efficiency
- On-Die Termination (ODT) for better signal quality
- Synchronous ODT
- Dynamic ODT
- Asynchronous ODT
- Multi Purpose Register (MPR) for pre-defined pattern
read out
- ZQ calibration for DQ drive and ODT
- Programmable Partial Array Self-Refresh (PASR)
- RESET pin for Power-up sequence and reset function
- SRT range : Normal/extended
- Programmable Output driver impedance control
Device Usage Chart
Operating
Temperature
Range
0°C ≤ Tc ≤ 95°C
-40°C ≤ Tc ≤ 95°C
Package Outline
78-ball FBGA
•
•
Speed
- H7
- I9
•
•
•
•
Power
Std.
L
•
•
•
•
Temperature
Mark
Blank
I
AMS73CAG01808RA Rev.1.0 December 2010
1