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A422604 Datasheet, PDF (8/24 Pages) AMIC Technology – 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
A422604 Series
AC Characteristics (continued) (VCC = 5.0V ±10%, VSS = 0V, Ta = 0°C to +70°C)
Test Conditions:
Input timing reference level: VIH/VIL=2.4V/0.8V
Output reference level: VOH/VOL=2.0V/0.8V
Output Load: 2TTL gate + CL (50pF)
Assumed tT=2ns
Std
# Symbol
Parameter
21
tRAL Column Address to RAS Lead Time
22
tCOH Output Hold After CAS Low
23
tOFF Output Buffer Turn-Off Delay Time
24
tASC Column Address Setup Time
25
tCAH Column Address Hold Time
26
tOES
OE Low to CAS High Set Up
27
tWCS Write Command Setup Time
28
tWCH Write Command Hold Time
29
tWCR Write Command Hold Time to RAS
30
tWP Write Command Pulse Width
31
tRWL Write Command to RAS Lead Time
32
tCWL Write Command to CAS Lead Time
33
tDS
Data-in setup Time
34
tDH
Data-in Hold Time
35
tDHR Data-in Hold Time to RAS
36
tRWC Read-Modify-Write Cycle Time
37
tRWD RAS to WE Delay Time (Read-Modify-Write)
38
tCWD
CAS to WE Delay Time (Read-Modify-Write)
-50
Min. Max.
22
-
-60
Min. Max.
27
-
3
-
4
-
-
3
-
5
0
-
0
-
8
-
10
-
10
-
10
-
0
-
0
-
8
-
10
-
45
-
55
-
8
-
10
-
13
-
15
-
8
-
10
-
0
-
0
-
8
-
10
-
45
-
55
-
114
-
135
-
65
-
78
-
28
-
33
-
39
tAWD
Column Address to WE Delay Time
(Read-Modify-Write)
40
tOEH
OE Hold Time from WE
37
-
45
-
8
-
10
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
8, 10
11
11
11
11
11
(March, 2009, Version 1.0)
7
AMIC Technology, Corp.