A422604 Datasheet, PDF (7/24 Pages) AMIC Technology – 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE

AC Characteristics (VCC = 5.0V ±10%, VSS = 0V, Ta = 0°C to +70°C)
Test Conditions:
Input timing reference level: VIH/VIL=2.4V/0.8V
Output reference level: VOH/VOL=2.0V/0.8V
Output Load: 2TTL gate + CL (50pF)
Assumed tT=2ns
Std
# _Symbol
Parameter
tT
Transition Time (Rise and Fall)
1
tRC
Random Read or Write Cycle Time
2
tRP
RAS Precharge Time
3
tRAS
RAS Pulse Width
4
tCAS
CAS Pulse Width
5
tRCD
RAS to CAS Delay Time
6
tRAD
RAS to Column Address Delay Time
7
tRSH
CAS to RAS Hold Time
8
tCSH
CAS Hold Time
9
tCRP
CAS to RAS Precharge Time
10
tASR Row Address Setup Time
11
tRAH Row Address Hold Time
12
tCLZ
CAS to Output in Low Z
13
tRAC
Access Time from RAS
14
tCAC
Access Time from CAS
15
tAA
Access Time from Column Address
16
tOEA
Access Time from OE
17
tAR
Column Address Hold Time from RAS
18
tRCS Read Command Setup Time
19
tRCH Read Command Hold Time
20
tRRH Read Command Hold Time Reference to
RAS
-50
Min.
1
84
30
Max.
50
-
-
50
10K
8
10K
11
37
9
28
8
-
37
-
5
-
0
-
8
-
3
-
-
50
-
13
-
22
-
13
45
-
0
-
0
-
0
-
A422604 Series
-60
Unit
Min.
Max.
1
50
ns
100
-
ns
36
-
ns
60
10K
ns
10
10K
ns
13
45
ns
11
33
ns
10
-
ns
41
-
ns
5
-
ns
0
-
ns
10
-
ns
3
-
ns
-
60
ns
-
15
ns
-
27
ns
-
15
ns
55
-
ns
0
-
ns
0
-
ns
0
-
ns
Notes
4, 5
6
7
8
6,7
6, 12
7, 12
9
9
(March, 2009, Version 1.0)
6
AMIC Technology, Corp.