PI3042A Datasheet, PDF (7/18 Pages) AMI SEMICONDUCTOR – Contact Image Sensor Chip

Preliminary PI3042A datasheet
Second Setup: The CIS modules made with these devices operate in excess of 5.0 MHz.
Accordingly the wafer probe specifications are supplemented with high frequency clocking
performance using an A6 length modules PCB board.
Electro-Optical Characteristics (25^o C)
The electro-optical characteristics of PI3042A imaging sensor chip are listed in Table 2. This is
the wafer probe specification used to tests the each die at 25^o C.
Parameters
Number of Photo-elements
Pixel-to-pixel spacing
Line scanning rate
Clock frequency
Symbols
Tint ⁽¹⁾
Fclk ⁽²⁾
Typical
128
~62.5
128/Fclk
500
Output voltage
Output voltage non-uniformity
Dark output voltage
Dark output non-uniformity
Adjacent Pixel non-uniformity
Chip-to-chip non-uniformity
Vpavg ⁽³⁾
Up ⁽⁴⁾
Vd ⁽⁵⁾
Ud ⁽⁶⁾
Upadj ⁽⁷⁾
Ucc ⁽⁸⁾
1.8 ± 0.35
7.5
<100
<100
<7.5
7.5
Units
elements
µm
µs/line
KHz
V
%
mV
mV
%
%
Notes
See note 2 for higher
clock speed.
(maximum 5 MHz)
Table 2. Electro-Optical Characteristic
Notes: (1)
(2)
(3)
Tint stands for the line scanning rate or the integration time. It is
determined by the time interval between two start pulses, where the start
pulses start the line-scan process, as soon as, CP, module clock, acquires
it and shifts it into the internal shift register. The minimum integration time
in a scan is determined by the number of pixels in the scan divided by the
clock frequency. In a CIS module it is the number of sensors times the
number of pixel in the sensor, all over the clock frequency. This time is
especially set for the wafer prober in order to calibrate the Vpavg, see
note (3).
Fclk is the device’s clock, CP, frequency and it is, also, equal to the pixel
rate. In the wafer test Fclk is set to 500 KHz. However, PIC (recently
acquired by AMIS) has been successfully mass-producing high frequency
CIS modules, using only the wafer test to qualify them. Hence, the device,
tested on an A6 size module’s PCB board at their standard high speed, is
specified.
Vpavg = Vp(n)/Npixels (average level in one line scan).
Where Vp(n) is the amplitude of n^th pixel in the sensor chip and
Npixels is the total number of pixels in sensor chip. Vpavg is converted from
impulse current video pixel into a voltage output. See Figure 4, Video Pixel
Output Structure in section Output Circuit Of The Image Sensor and Figure 5,
Video Output Test and Application Circuit in section Signal Conversion Circuit on
page 6 and 7. Vpavg is calibrated for each image sensor type because of probe
card variations, as well as, the interfacing circuits to the wafer probe machine.
Page 7 of18 Date: 09/23/05