AMIS-42675 Datasheet, PDF (7/12 Pages) AMI SEMICONDUCTOR – High-Speed Low Power CAN Transceiver

AMIS-42675 High-Speed Low Power CAN Transceiver
For Long Networks
Data Sheet
Table 8: Characteristics (continued)
Symbol
Parameter
Common-mode Stabilization (pin V_SPLIT)
V_SPLIT
Reference output voltage at pin V_SPLIT
I_SPLIT(i)
V_SPLIT leakage current
I_SPLIT(lim)
V_SPLIT limitation current
Power-on-Reset (POR)
PORL
POR level
Thermal Shutdown
T_j(sd)
Shutdown junction temperature
Timing Characteristics (see Figure 4 and Figure 5)
t_d(TxD-BUSon)
Delay TXD to bus active
t_{d(TxD-BUSoff)}
Delay TXD to bus inactive
t_d(BUSon-RXD)
t_{d(BUSoff-RXD)}
t_pd(rec-dom)
t_d(dom-rec)
t_d(stb-nm)
t_dbus
Delay bus active to RXD
Delay bus inactive to RXD
Propagation delay TXD to RXD from recessive
to dominant
Propagation delay TXD to RXD from dominant
to recessive
Delay standby mode to normal mode
Dominant time for wake-up via bus
Conditions
Normal mode;
-500µA < I_SPLIT < 500µA
Stand-by mode
Normal mode
CANH, CANL, V_ref in tri-
state below POR level
C_l = 100pF between
CANH to CANL
C_l = 100pF between
CANH to CANL
C_rxd = 15pF
C_rxd = 15pF
C_l = 100pF between
CANH to CANL
C_l = 100pF between
CANH to CANL
Min.
0.3 x V_CC
-5
-3
2.2
150
40
30
25
40
90
90
5
0.75
Typ.
-
3.5
160
85
60
55
100
7.5
2.5
8.5 Measurement Set-ups and Definitions
+5 V
100 nF
V_CC
TxD
RxD
20 pF
3
7 ^CANH
1
1 nF
AMIS- ^VSPLIT
5
42675
4
8
STB
1 nF
6
CANL
2
GND
Transient
Generator
PC20071006.1
Figure 4: Test Circuit for Transients
Max.
0.7 x V_CC
+5
+3
4.7
180
105
105
105
105
230
245
10
5
Unit
µA
mA
V
°C
ns
ns
ns
ns
ns
ns
µs
µs
V_RxD
PC20040829.7
Hysteresis
0,5
0,9
Figure 5: Hysteresis of the Receiver
AMI Semiconductor –October 07, Rev. 1.0
7
www.amis.com Specifications subject to change without notice
High
Low
V_i(dif)(hys)