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AMIS-42675 Datasheet, PDF (5/12 Pages) AMI SEMICONDUCTOR – High-Speed Low Power CAN Transceiver
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AMIS-42675 High-Speed Low Power CAN Transceiver
For Long Networks
8.0 Electrical Characteristics
Data Sheet
8.1 Definitions
All voltages are referenced to GND (pin 2). Positive currents flow into the IC. Sinking current means the current is flowing into the pin;
sourcing current means the current is flowing out of the pin.
8.2 Absolute Maximum Ratings
Stresses above those listed in the following table may cause permanent device failure. Exposure to absolute maximum ratings for
extended periods may affect device reliability.
Table 5: Absolute Maximum Ratings
Symbol
Parameter
Conditions
VCC
Supply voltage
VCANH
DC voltage at pin CANH
0 < VCC < 5.25V; no time limit
VCANL
DC voltage at pin CANL
0 < VCC < 5.25V; no time limit
VSPLIT
DC voltage at pin VSPLIT
0 < VCC < 5.25V; no time limit
VTxD
DC voltage at pin TxD
VRxD
DC voltage at pin RxD
VSTB
DC voltage at pin STB
Vtran(CANH)
Transient voltage at pin CANH
Note 1
Vtran(CANL)
Transient voltage at pin CANL
Note 1
Vtran(VSPLIT)
Transient voltage at pin VSPLIT
Note 1
Vesd(
Electrostatic discharge voltage at all pins
Note 2
Note 4
Latch-up
Static latch-up at all pins
Note 3
Tstg
Storage temperature
Tamb
Ambient temperature
Tjunc
Notes:
Maximum junction temperature
1) Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 4).
2) Standardized human body model electrostatic discharge (ESD) pulses in accordance to MIL883 method 3015.7.
3) Static latch-up immunity: Static latch-up protection level when tested according to EIA/JESD78.
4) Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3-1993.
Min.
Max.
Unit
-0.3
+7
V
-50
+50
V
-50
+50
V
-50
+50
V
-0.3 VCC + 0.3
V
-0.3 VCC + 0.3
V
-0.3 VCC + 0.3
V
-300
+300
V
-300
+300
V
-300
+300
V
-5
+5
kV
-750
+750
V
120
mA
-55
+150
°C
-40
+125
°C
-40
+170
°C
8.3 Thermal Characteristics
Table 6: Thermal Characteristics
Symbol
Parameter
Rth(vj-a)
Thermal resistance from junction to ambient in SO8 package
Rth(vj-s)
Thermal resistance from junction to substrate of bare die
Conditions
In free air
In free air
Value
Unit
145
K/W
45
K/W
AMI Semiconductor –October 07, Rev. 1.0
5
www.amis.com Specifications subject to change without notice
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