AMIS-42671 Datasheet, PDF (7/12 Pages) AMI SEMICONDUCTOR – High-Speed CAN Transceiver

AMIS-42671 High-Speed CAN Transceiver
For Long Networks
Data Sheet
Table 7: DC and Timing Characteristics (continued)
Symbol
Parameter
C_i(CANH)
Input capacitance at pin CANH
C_i(CANL)
Input capacitance at pin CANL
C_i(dif)
I_LI(CANH)
Differential input capacitance
Input leakage current at pin CANH
I_LI(CANL)
Input leakage current at pin CANL
V_CM-peak
Common-mode peak during transition from
dom → rec or rec → dom
V_CM-step
Difference in common-mode between
dominant and recessive state
Power-on-Reset (POR)
PORL
POR level
Thermal Shutdown
T_j(sd)
Shutdown junction temperature
Timing Characteristics (see Figure 7 and Figure 8)
t_d(TxD-BUSon)
t_{d(TxD-BUSoff)}
t_d(BUSon-RxD)
t_{d(BUSoff-RxD)}
t_pd(rec-dom)
Delay TxD to bus active
Delay TxD to bus inactive
Delay bus active to RxD
Delay bus inactive to RxD
Propagation delay TxD to RxD from
recessive to dominant
t_d(dom-rec)
Propagation delay TxD to RxD from
dominant to recessive
Conditions
V_TxD = V_CC; not tested
V_TxD = V_CC; not tested
V_TxD = V_CC; not tested
V_CC = 0V; V_CANH = 5V
V_CC = 0V; V_CANL = 5V
See Figure 9 and Figure 10
See Figure 9 and Figure 10
CANH, CANL, V_ref in tri-
state below POR level
V_s = 0V
V_s = 0V
V_s = 0V
V_s = 0V
V_s = 0V
V_s = 0V
Min.
10
10
-500
-150
2.2
150
40
30
25
65
70
100
Typ.
7.5
7.5
3.75
170
170
3.5
160
85
60
55
100
8.5 Measurement Set-ups and Definitions
Max.
20
20
10
250
250
500
150
4.7
180
130
105
105
135
245
245
Unit
pF
pF
pF
µA
µA
mV
mV
V
°C
ns
ns
ns
ns
ns
ns
+5 V
100 nF
V_CC
3
TxD
7 ^CANH
1
1 nF
AMIS- ^VREF
5
42671
RxD
4
8
1 nF
6
CANL
2
20 pF
AUTB GND
Transient
Generator
PC20071002.1
Figure 5: Test Circuit for Transients
V_RxD
PC20040829.7
Hysteresis
0,5
0,9
Figure 6: Hysteresis of the Receiver
High
Low
V_i(dif)(hys)
AMI Semiconductor – Oct. 07, Rev. 1.0
7
www.amis.com Specifications subject to change without notice