AMIS-42671 Datasheet, PDF (5/12 Pages) AMI SEMICONDUCTOR – High-Speed CAN Transceiver

AMIS-42671 High-Speed CAN Transceiver
For Long Networks
Data Sheet
7.3 High Communication Speed Range
The transceiver is primarily intended for industrial applications. It allows very low baud rates needed for long bus length applications.
But also high speed communication is possible up to 1Mbit/s.
7.4 Fail-safe Features
A current-limiting circuit protects the transmitter output stage from damage caused by an accidental short-circuit to either positive or
negative supply voltage, although power dissipation increases during this fault condition.
The pins CANH and CANL are protected from automotive electrical transients (according to “ISO 7637”; see Figure 5). Pin TxD is
pulled high internally should the input become disconnected.
8.0 Electrical Characteristics
8.1 Definitions
All voltages are referenced to GND (pin 2). Positive currents flow into the IC. Sinking current means the current is flowing into the pin;
sourcing current means the current is flowing out of the pin.
8.2 Absolute Maximum Ratings
Stresses above those listed in the following table may cause permanent device failure. Exposure to absolute maximum ratings for
extended periods may affect device reliability.
Table 4: Absolute Maximum Ratings
Symbol
Parameter
V_CC
V_CANH
Supply voltage
DC voltage at pin CANH
V_CANL
DC voltage at pin CANL
V_TxD
DC voltage at pin TxD
V_RxD
DC voltage at pin RxD
V_AUTB
DC voltage at pin AUTB
V_REF
DC voltage at pin V_REF
V_tran(CANH)
Transient voltage at pin CANH
V_tran(CANL)
Transient voltage at pin CANL
V_esd
Electrostatic discharge voltage at all pins
Latch-up
T_stg
T_amb
T_junc
Static latch-up at all pins
Storage temperature
Ambient temperature
Maximum junction temperature
Conditions
0 < V_CC < 5.25V; no time limit
0 < V_CC < 5.25V; no time limit
Note 1
Note 1
Note 2
Note 4
Note 3
Min. Max.
Unit
-0.3 +7
V
-45
+45
V
-45
+45
V
-0.3 V_CC + 0.3 V
-0.3
V_CC + 0.3 V
-0.3 V_CC + 0.3 V
-0.3 V_CC + 0.3 V
-150 +150
V
-150 +150
V
-4
+4
kV
-500 +500
V
100
mA
-55
+155
°C
-40
+125
°C
-40
+150
°C
Notes:
1.
2.
3.
4.
Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 4).
Standardized human body model ESD pulses in accordance to MIL883 method 3015.7.
Static latch-up immunity: static latch-up protection level when tested according to EIA/JESD78.
Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3-1993.
8.3 Thermal Characteristics
Table 5: Thermal Characteristics
Symbol
Parameter
R_th(vj-a)
Thermal resistance from junction to ambient in SO8 package
R_th(vj-s)
Thermal resistance from junction to substrate of bare die
Conditions
In free air
In free air
Value
Unit
150
K/W
45
K/W
AMI Semiconductor – Oct. 07, Rev. 1.0
5
www.amis.com Specifications subject to change without notice