English
Language : 

AMIS-30600 Datasheet, PDF (6/11 Pages) AMI SEMICONDUCTOR – LIN Transceiver
AMIS-30600 LIN Transceiver
Data Sheet
6.4 AC Electrical Characteristics
VCC = 4.75 to 5.25V; VBB = 7.3 to 18V; VEN > VEN,on ; Tamb = -40 to +125°C; RL = 500Ω unless specified otherwise.
Load for slope definitions (typical loads) = [L1] 1nF 1kΩ / [L2] 6.8nF 600Ω / [L3] 10nF 500Ω.
Table 7: AC Characteristics According to LIN V1.3
Symbol
Parameter
Conditions
Dynamic Transceiver Characteristics According to LIN v1.3
t _slope_F
Slope time falling edge
See Figure 6
t _slope_R
Slope time rising edge
See Figure 6
t _slope _Sym Slope time symmetry
t _slope_F - t _slope_R
T_rec_F
T_rec_R
Propagation delay Bus dominant
to RxD = low; note 1
Propagation delay Bus recessive
to RxD = high; note 1
See Figure 5, 6
See Figure 5, 6
tWAKE
Wake-up delay time
Min.
4
4
-8
30
Typ.
-
-
-
2
2
100
Max.
Unit
24
µs
24
µs
+8
µs
6
µs
6
µs
200
µs
Notes:
1. Not measured on ATE.
VCC = 4.75 to 5.25V; VBB = 7.3 to 18V; VEN > VEN,on ; Tamb = -40 to +125°C; RL = 500Ω unless specified otherwise.
Load for slope definitions (typical loads) = [L1] 1nF 1kΩ / [L2] 6.8nF 600Ω / [L3] 10nF 500Ω.
Table 8: AC Characteristics According to LIN V2.0
Symbol
Parameter
Conditions
Dynamic Receiver Characteristics according to LIN v2.0
trx_pdr
trx_pdf
trx_sym
Propagation delay bus dominant
to RxD = low; note 1
Propagation delay Bus recessive
to RxD = high; note 1
Symmetry of receiver propagation delay
See Figure 7
See Figure 7
trx_pdr - trx_pdf
Dynamic Transmitter Characteristics according to LIN v2.0
D1
Duty cycle 1 = tBus_rec(min)/(2 x tBit);
See Figure 7
THRec(max)= 0.744 x Vbat;
THDom(max)= 0.581 x Vbat;
Vbat = 7.0V ... 18V; tBit= 50µs
THRec(max)= 0.744 x Vbat;
D1
Duty cycle 1 = tBus_rec(min)/(2 x tBit);
See Figure 7
THDom(max)= 0.581 x Vbat;
Vbat = 7.0V; tBit= 50µs;
tamb = -40°C
D2
Duty cycle 2 = tBus_rec(max)/(2 x tBit);
See Figure 7
THRec(min)= 0.284 x Vbat;
THDom(min)= 0.422 x Vbat;
Vbat = 7.6V ... 18V; tBit= 50µs;
Notes:
1. Not measured on ATE.
Min. Typ. Max. Unit
6
µs
6
µs
-2
-
+2
µs
0.396
0.5
0.366
0.5
0.5
0.581
AMI Semiconductor – Rev. 2.0, Apr. 2005
www.amis.com
6