AMIS-30600 Datasheet, PDF (5/11 Pages) AMI SEMICONDUCTOR – LIN Transceiver

AMIS-30600 LIN Transceiver
Data Sheet
6.2 Operating Range
Table 5: Operating Range
Symbol Parameter
V_CC
Supply voltage
V_BB
Battery supply voltage
T_junc
Maximum junction temperature
T_jsd
Thermal shutdown temperature
R_thj-a
Thermal resistance junction to ambient
Min.
4.75
7.3
-40
+150
Typ.
+170
185
Max.
+5.25
+18
+150
+190
Unit
V
V
°C
°C
°C/W
6.3 DC Electrical Characteristics
V_CC = 4.75 to 5.25V; V_BB = 7.3 to 18V; V_EN > V_EN,on ; T_amb = -40 to +125°C; R_L = 500Ω unless specified otherwise. All voltages with
respect to ground; positive current flowing into pin; unless otherwise specified.
Table 6: DC Characteristics
Symbol
Parameter
Supply (pin VCC and pin VBB)
I_CC
5V supply current
I_BB
Battery supply current
I_BB
Battery supply current
I_CC
5V supply current
Transmitter Data Input (pin TxD)
V_IH
High-level input voltage
V_IL
Low-level input voltage
R_TxD,pu
Pull-up resistor to Vcc
Receiver Data Output (pin RxD)
V_OH
High-level output voltage
V_OL
Low-level output voltage
Enable Input (pin EN)
V_EN,on
High-level input voltage
V_EN,off
Low-level input voltage
R_EN,pd
Pull-down resistor to GND
Inhibit Output (pin INH)
V_INH,d
High-level voltage drop: V_INH,d = V_BB - V_INH
I_INH,lk
Leakage current
Bus Line (pin LIN)
V_bus,rec
Recessive bus voltage at pin LIN
V_bus,dom
Dominant output voltage at pin LIN
I_bus,sc
Bus short circuit current
I_bus,lk
Bus leakage current
R_bus
V_bus,rd
V_bus,dr
Vq
V_WAKE
Bus pull-up resistance
Receiver threshold: recessive to dominant
Receiver threshold: dominant to recessive
Receiver hysteresis
Wake-up threshold voltage
Conditions
Dominant; V_TxD =0V
Recessive; V_TxD =V_CC
Dominant; V_TxD =0V
Recessive; V_TxD =V_CC
Sleep mode; V_INH = 0V
Sleep mode; V_INH = 0V
Output recessive
Output dominant
I_RXD = -10mA
I_RXD = 5mA
Normal mode
Low power mode
I_INH = - 0.15mA
Sleep mode; V_INH = 0V
V_TxD =V_CC
V_TxD = 0V
V_TxD = 0V; I_bus = 40mA
V_bus,short = 18V
V_CC=V_BB=0V; V_bus=8V
V_CC=V_BB=0V; V_bus=20V
V_TxD = 0V
V_bus,hys=V_bus,rec-V_bus,dom
Min.
Typ.
Max.
Unit
400
700
µA
250
500
µA
1
1.5
mA
100
200
µA
35
55
µA
0.25
1
µA
0.7 x V_CC
-
V_CC
V
0
-
0.3 x V_CC
V
24
60
kΩ
0.8 x V_CC
0
V_CC
V
0.2 x V_CC
V
0.7 x V_CC
-
V_CC
V
0
-
0.3 x V_CC
V
6
10
15
kΩ
0.5
1.0
V
-5.0
-
5.0
µA
0.9 x V_BB
0
40
-400
20
0.4 x V_BB
0.4 x V_BB
0.05 x V_BB
0.4 x V_BB
-
V_BB
V
-
0.15 x V_BB
V
1.4
V
85
130
mA
-200
5
20
µA
30
47
kΩ
0.48 x V_BB
0.6 x V_BB
V
0.52 x V_BB
0.6 x V_BB
V
0.04 x V_BB 0.175 x V_BB V
0.6 x V_BB
V
AMI Semiconductor – Rev. 2.0, Apr. 2005
www.amis.com
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