N08M1618L1A Datasheet, PDF (5/11 Pages) AMI SEMICONDUCTOR – 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit

AMI Semiconductor, Inc.
N08M1618L1A
Advance Information
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
Timing V_CCQ > or = V_CC
Item
Read Cycle Time
Address Access Time
Address Access Time (Page Mode)
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
Symbol
t_RC
t_AA
t_AAP
t_CO
t_OE
t_LB, t_UB
t_LZ
t_OLZ
t_LBZ, t_UBZ
t_HZ
t_OHZ
t_LBHZ, t_UBHZ
t_OH
0.1V_CC to 0.9 V_CC
5ns
0.5 V_CC
CL = 30pF
-40 to +85 ^oC
V_CC = 1.4 - 2.2 V
Min.
Max.
150
150
30
150
50
150
20
20
20
0
30
0
30
0
30
20
V_CC = 1.7 - 2.2 V
Min.
Max.
85
85
30
85
40
85
10
5
10
0
15
0
15
0
15
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
t_WC
150
85
ns
t_CW
75
50
ns
t_AW
75
50
ns
t_LBW, t_UBW
75
50
ns
t_WP
50
40
ns
t_AS
0
0
ns
t_WR
0
0
ns
t_WHZ
30
15
ns
t_DW
50
40
ns
t_DH
0
0
ns
t_OW
10
5
ns
Stock No. 23211-03 9/21/06
ADVANCE INFORMATION
5
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.