N08M1618L1A Datasheet, PDF (11/11 Pages) AMI SEMICONDUCTOR – 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit

AMI Semiconductor, Inc.
N08M1618L1A
Advance Information
Ordering Information
N08M1618L1AX-XX X
I = Industrial, -40°C to 85°C
Temperature
Performance
85 = 85ns @ 1.7V
Package Type
B = 48-ball BGA
D = Known Good Die
Revision History
Revision #
01
02
03
Date
11/01/02
3/03/05
9/21/2006
Change Description
Initial Release
General Update:
Updated ICC4 typical and ISB1 typical value
Updated Block Diagram, Functional Description Table.
Added tAAP, tLB, tUB, tLBZ, tUBZ, tLBHZ, tUBHZ, tLBW, tUBW timing parameters.
Added Page Mode Read Timing Waveform
Updated BGA 8X10 Package Drawing
Updated VccQ range on DC Parameters Table
Converted to AMI Semiconductor
© 2006 AMI Semiconductor, Inc. All rights reserved.
AMI Semiconductor, Inc. ("AMIS") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
AMIS does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur-
poses only and they vary depending upon specific applications.
AMIS makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does AMIS assume any liability arising out of the application or use of
any product or circuit described herein. AMIS does not authorize use of its products as critical components in any application in which the failure of the AMIS product may be
expected to result in significant injury or death, including life support systems and critical medical instruments.
Stock No. 23211-03 9/21/06
ADVANCE INFORMATION
11
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.