AMIS-42665 Datasheet, PDF (5/13 Pages) AMI SEMICONDUCTOR – High-Speed Low Power CAN Transceiver

AMIS-42665 High-Speed Low Power CAN Transceiver
Data Sheet
The pins CANH and CANL are protected from automotive electrical transients (according to ISO 7637; see Figure 4). Pins TxD and
STB are pulled high internally should the input become disconnected. Pins TxD, STB and RxD will be floating, preventing reverse
supply should the V_CC supply be removed.
8.0 Electrical Characteristics
8.1 Definitions
All voltages are referenced to GND (pin 2). Positive currents flow into the IC. Sinking current means the current is flowing into the pin;
sourcing current means the current is flowing out of the pin.
8.2 Absolute Maximum Ratings
Stresses above those listed in the following table may cause permanent device failure. Exposure to absolute maximum ratings for
extended periods may effect device reliability.
Table 4: Absolute Maximum Ratings
Symbol
Parameter
V_CC
Supply voltage
V_CANH
DC voltage at pin CANH
V_CANL
DC voltage at pin CANL
V_SPLIT
DC voltage at pin VSPLIT
V_TxD
DC voltage at pin TxD
V_RxD
DC voltage at pin RxD
V_STB
DC voltage at pin STB
V_tran(CANH)
Transient voltage at pin CANH
V_tran(CANL)
Transient voltage at pin CANL
V_tran(VSPLIT)
Transient voltage at pin VSPLIT
V_{esd(CANL/CANH/} Electrostatic discharge voltage at CANH and CANL pin
VSPLIT)
V_esd
Electrostatic discharge voltage at all other pins
Latch-up
T_stg
T_amb
T_junc
Static latch-up at all pins
Storage temperature
Ambient temperature
Maximum junction temperature
Conditions
0 < V_CC < 5.25V; no time limit
0 < V_CC < 5.25V; no time limit
0 < V_CC < 5.25V; no time limit
Note 1
Note 1
Note 1
Note 2
Note 4
Note 2
Note 4
Note 3
Min.
Max.
Unit
-0.3
+7
V
-50
+50
V
-50
+50
V
-50
+50
V
-0.3 V_CC + 0.3
V
-0.3 V_CC + 0.3
V
-0.3 V_CC + 0.3
V
-300
+300
V
-300
+300
V
-300
+300
V
-8
+8
kV
-500
+500
V
-5
+5
kV
-500
+500
V
120
mA
-55
+150
°C
-40
+125
°C
-40
+170
°C
Notes:
1) Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 4).
2) Standardized human body model electrostatic discharge (ESD) pulses in accordance to MIL883 method 3015.7.
3) Static latch-up immunity: Static latch-up protection level when tested according to EIA/JESD78.
4) Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3-1993.
8.3 Thermal Characteristics
Table 5: Thermal Characteristics
Symbol Parameter
R_th(vj-a)
Thermal resistance from junction to ambient in SO8 package
R_th(vj-s)
Thermal resistance from junction to substrate of bare die
Conditions
In free air
In free air
Value Unit
145 K/W
45
K/W
AMI Semiconductor – Rev. 3.1, April 06
5
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