N04Q1618C2B Datasheet, PDF (13/13 Pages) AMI SEMICONDUCTOR – 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY

AMI Semiconductor, Inc.
Ordering Information
N04Q16 XX C2B X - XX X
N04Q1618C2B
Advance Information
Temperature ^{C = 0oC - 70oC}
Performance
Package Type
70 = 70ns
85 = 85ns
15 = 150ns (under development)
T2 = 44-pin TSOP II Green (RoHS Compliant)
B2 = 48-ball BGA Green (RoHS Compliant)
W = Wafer (KGD)
Operating Voltage
12 = 1.2V (under development)
18 = 1.8V
Q = Low Power SRAM with VccQ for dual rail operation
Revision History
Revision
A
B
Date
October 2005
February 2006
C
July 2006
D
September 2006
Change Description
Initial Advanced Release
Raised maximum Vcc to 3.6V for 3V device
Added green packages
Changed dual rail to ‘Q’ part designator
Seperated 1,8V dual rail and 3V single rail
Updated VccQ for TSOP
Converted to AMI Semiconductor
© 2006 AMI Semiconductor, Inc. All rights reserved.
AMI Semiconductor, Inc. ("AMIS") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
AMIS does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur-
poses only and they vary depending upon specific applications.
AMIS makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does AMIS assume any liability arising out of the application or use of
any product or circuit described herein. AMIS does not authorize use of its products as critical components in any application in which the failure of the AMIS product may be
expected to result in significant injury or death, including life support systems and critical medical instruments.
Stock No. 23451-D 11/06
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The specification is ADVANCE INFORMATION and subject to change without notice.