AM29LV065D Datasheet, PDF (52/52 Pages) Advanced Micro Devices – 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control

REVISION SUMMARY
Revision A (July 27, 2000)
Initial release.
Revision A+1 (August 4, 2000)
Global
Deleted references to the 48-pin reverse TSOP.
Connection Diagrams
Corrected pin 36 on TSOP package to V_IO.
Accelerated Program Operation, Unlock Bypass
Command Sequence
Modified caution note regarding ACC input.
Revision A+2 (August 14, 2000)
Ordering Information
Corrected 90 ns entry in V_IO column for FBGA.
Revision A+3 (August 25, 2000)
Table 3, Am29LV065D Autoselect Codes,
(High Voltage Method)
Corrected the SecSI Sector Indicator Bit codes from
80h/00h to 90h/10h.
Revision A+4 (October 19, 2000)
Global
Changed data sheet status to “Preliminary.”
Revision A+5 (November 7, 2000)
Ordering Information
Deleted burn-in option.
Revision A+6 (November 27, 2000)
Pin Description, and Table 11, Write Operation
Status
Deleted references to RY/BY# being available only on
the FBGA package. RY/BY# is also available on the
TSOP package.
Revision A+7 (March 8, 2001)
Global
Deleted “Preliminary” status from document.
Table 4, Sector Group Protection/Unprotection
Address Table
Corrected the sector group address bits for sectors
64–127.
Revision B (January 10, 2002)
Global
Added TSR048 package. Clarified description of Ver-
satileIO (V_IO) in the following sections: Distinctive
Characteristics; General Description; VersatileIO (V_IO)
Control; Operating Ranges; DC Characteristics;
CMOS compatible.
Reduced typical sector erase time from 1.6 s to 0.9 s.
Table 3, Am29LV065D Autoselect Codes,
(High Voltage Method)
Corrected the autoselect code for sector protection
verification.
Sector Group Protection and Unprotection
Deleted reference to previous method of sector pro-
tection and unprotection.
Autoselect Command Sequence
Clarified description of function.
SecSi (Secured Silicon) Sector Flash
Memory Region
Clarified the customer lockable version of this device
can be programmed and protected only once. In Table
5, changed address range in second row.
DC Characteristics
Changed minimum V_OH1 from 0.85V_IO to 0.8V_IO. De-
leted reference to Note 6 for both V_OH1 and V_OH2.
Erase and Program Operations table
Corrected to indicate t_BUSY specification is a maximum
value.
Erase and Program Performance table
Changed typical sector erase time from 1.6 s to 0.9 s
and typical chip erase time from 205 s to 115 s.
Copyright © 2002 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
January 10, 2002
Am29LV065D
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