 English |
|
|
|
|
|
|
|
| AM29LV065D Datasheet, PDF (22/52 Pages) Advanced Micro Devices – 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control | |||
| |||
| ◁ |
Addresses (x8)
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
Addresses (x8)
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
Data
27h
36h
00h
00h
04h
00h
0Ah
00h
05h
00h
04h
00h
Data
17h
00h
00h
00h
00h
01h
7Fh
00h
00h
01h
00h
00h
00h
00h
00h
00h
00h
00h
00h
00h
00h
00h
Table 7. System Interface String
Description
VCC Min. (write/erase)
D7âD4: volt, D3âD0: 100 millivolt
VCC Max. (write/erase)
D7âD4: volt, D3âD0: 100 millivolt
VPP Min. voltage (00h = no VPP pin present)
VPP Max. voltage (00h = no VPP pin present)
Typical timeout per single byte write 2N µs
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
Typical timeout per individual block erase 2N ms
Typical timeout for full chip erase 2N ms (00h = not supported)
Max. timeout for byte write 2N times typical
Max. timeout for buffer write 2N times typical
Max. timeout per individual block erase 2N times typical
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 8. Device Geometry Definition
Description
Device Size = 2N byte
Flash Device Interface description (refer to CFI publication 100)
Max. number of bytes in multi-byte write = 2N
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information (refer to CFI publication 100)
Erase Block Region 3 Information (refer to CFI publication 100)
Erase Block Region 4 Information (refer to CFI publication 100)
January 10, 2002
Am29LV065D
21
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese