AM29LV640MU_02 Datasheet, PDF (42/54 Pages) Advanced Micro Devices – 64 Megabit (4 M x 16-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O™ Control

ADVANCE INFORMATION
AC CHARACTERISTICS
Erase and Program Operations
Parameter
Speed Options
JEDEC
Std. Description
90R 101 112 120 Unit
t_AVAV
t_AVWL
t_WC Write Cycle Time (Note 1)
Min
90
100 110 120 ns
t_AS Address Setup Time
Min
0
ns
t_ASO
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
t_WLAX
t_AH Address Hold Time
Min
t_AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
45
ns
0
ns
t_DVWH
t_DS Data Setup Time
Min
t_WHDX
t_DH Data Hold Time
Min
t_OEPH Output Enable High during toggle bit polling
Min
t_GHWL
t_GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
45
ns
0
ns
20
ns
0
ns
t_ELWL
t_CS CE# Setup Time
Min
t_WHEH
t_CH CE# Hold Time
Min
t_WLWH
t_WP Write Pulse Width
Min
t_WHDL
t_WPH Write Pulse Width High
Min
Write Buffer Program Operation (Notes 2, 3)
Typ
0
ns
0
ns
35
ns
30
ns
100
µs
Effective Write Buffer Program Operation, Per
Word (Notes 2, 4)
Typ
5.9
µs
t_WHWH1
t_WHWH1
Accelerated Effective Write Buffer Program
Operation, Per Word (Notes 2, 4)
Typ
4.7
µs
Single Word Program (Note 2)
Typ
100
µs
Accelerated Single Word Programming
Operation (Note 2)
Typ
80
µs
t_WHWH2
t_WHWH2 Sector Erase Operation (Note 2)
Typ
0.4
sec
t_VHH V_HH Rise and Fall Time (Note 1)
Min
250
ns
t_VCS V_CC Setup Time (Note 1)
Min
50
µs
t_RB Write Recovery Time from RY/BY#
Min
0
ns
t_BUSY Program/Erase Valid to RY/BY# Delay
Min
90
ns
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words programmed.
4. Effective write buffer specification is based upon a 16-word write buffer operation.
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Am29LV640MU
April 26, 2002