AM29LV640MU_02 Datasheet, PDF (1/54 Pages) Advanced Micro Devices – 64 Megabit (4 M x 16-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O™ Control

ADVANCE INFORMATION
Am29LV640MU
64 Megabit (4 M x 16-Bit) MirrorBit
3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
s Single power supply operation
— 3 V for read, erase, and program operations
s VersatileI/O control
— Device generates data output voltages and tolerates
data input voltages on the CE# and DQ inputs/outputs
as determined by the voltage on the V_IO pin; operates
from 1.65 to 3.6 V
s Manufactured on 0.23 µm MirrorBit process
technology
s SecSi (Secured Silicon) Sector region
— 128-word sector for permanent, secure identification
through an 8-word random Electronic Serial Number,
accessible through a command sequence
— May be programmed and locked at the factory or by
the customer
s Flexible sector architecture
— One hundred twenty-eight 32 Kword sectors
s Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
s Minimum 100,000 erase cycle guarantee per sector
s 20-year data retention at 125°C
PERFORMANCE CHARACTERISTICS
s High performance
— 90 ns access time
— 25 ns page read times
— 0.4 s typical sector erase time
— 5.9 µs typical write buffer word programming time:
16-word write buffer reduces overall programming
time for multiple-word/byte updates
— 4-word page read buffer
— 16-word write buffer
s Low power consumption (typical values at 3.0 V, 5
MHz)
— 30 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
s Package options
— 63-ball Fine-Pitch BGA
— 64-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
s Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: r ead/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
s Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V_ID-level method of
changing code in locked sectors
— ACC (high voltage) input accelerates programming
time for higher throughput during system production
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) indicates program or
erase cycle completion
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.4/26/02
Publication# 25301 Rev: B Amendment/+1
Issue Date: April 26, 2002
Refer to AMD’s Website (www.amd.com) for the latest information.