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| AM29N323D Datasheet, PDF (41/48 Pages) Advanced Micro Devices – 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | |||
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AC CHARACTERISTICS
Last Cycle in
Program or
Sector Erase
Command Sequence
tWC
CE#
Read status (at least two cycles) in same bank
and/or array data from other bank
tRC
tRC
Begin another
write or program
command sequence
tWC
OE#
WE#
A/DQ0:
A/DQ15
A16: A20
tOE
tOEH
tGHWL
tWPH
tWP
tDS
tACC
tDH
tDF
tOH
PA/SA PD/30h
RA
RD
RA
RD
555h
AAh
tSR/W
PA/SA
RA
RA
tAS
AVD#
tAH
Note: Breakpoints in waveforms indicate that system may alternately read array data from the ânon-busy bankâ while checking
the status of the program or erase operation in the âbusyâ bank. The system should read status twice to ensure valid information.
Figure 21. Back-to-Back Read/Write Cycle Timings
40
Am29N323D
August 8, 2002
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